Improvement
for amorphous carbon mobility
Yoji Miyajima:
y.miyajima@eim.surrey.ac.uk
Various types of amorphous
carbon (a-C) are produced by using several deposition techniques. It
is known that the properties of a-C can vary widely, for instance, simply
by changing the sp2/sp3 ratio to give, optical band gaps from 0 to 5
eV without the incorporation other materials. However, the mobility
of amorphous carbon is low, compared with that of hydrogenated amorphous
silicon (a-Si). By hydrogenating a-Si, the mobility of a-Si can be improved.
Consequently a-Si is used in electronics materials such as TFT displays.
Therefore, for a-C to be used as an electronic material its mobility
must be improved. This could be achieved by doping with dopants such
as; Boron and Nitrogen. In addition, metals can incorporated as catalysis.
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