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Improvement for amorphous carbon mobility

Yoji Miyajima: y.miyajima@eim.surrey.ac.uk

Various types of amorphous carbon (a-C) are produced by using several deposition techniques. It is known that the properties of a-C can vary widely, for instance, simply by changing the sp2/sp3 ratio to give, optical band gaps from 0 to 5 eV without the incorporation other materials. However, the mobility of amorphous carbon is low, compared with that of hydrogenated amorphous silicon (a-Si). By hydrogenating a-Si, the mobility of a-Si can be improved. Consequently a-Si is used in electronics materials such as TFT displays.


Therefore, for a-C to be used as an electronic material its mobility must be improved. This could be achieved by doping with dopants such as; Boron and Nitrogen. In addition, metals can incorporated as catalysis.


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