Properties of CNTs Growth using a Low-temperature Process

The special nature of carbon, combined with the molecular perfection of nanotubes, endow them with exceptionally high material properties such as electrical and thermal conductivity, strength, stiffness, and toughness. Carbon nanotubes (CNTs) open incredible applications in materials, electronics, chemical processing and energy management. However, these extraordinary properties have been previously hindered by current growth techniques which require substrate temperatures around 1000°C or higher, resulting in material compatibility issues. Low temperature growth has been identified as the holy grail of nanotechnology. In this work, we use the NanoGrowth system provided by Surrey NanoSystems that uses a patented technology for CNT growth at CMOS-compatible substrate temperatures.

CNT growth is dependent on a range of parameters. Critical parameters include gas phase composition, substrate preparation, catalyst composition and preparation method and growth temperature.  We are investigating the influence of these parameters on CNT growth on various types of substrates, for various commercial applications. The goal is to develop CNT growth processes that yield CNT material, ensuring good adhesion and lowest growth temperature.

We have grown CNTs both randomly-oriented and vertically-aligned over 3-Inch wafers using the NanoGrowth system. We are currently investigating the original mechanism that leads to CNT adhesion. We have grown these CNT films on electrically conductive, insulating and semiconducting substrates.