2001 & Earlier

  1. Electron-energy-loss spectroscopy characterization of the sp2 bonding fraction within carbon thin films. A. J. Papworth, C. J. Kiely, A. P. Burden, S. R. P. Silva and G. A. J. Amaratunga, Phys. Rev. B 62,12628 2000. Online version

  2. Influence of sp2 clusters on the field emission properties of amorphous carbon thin films. J. D. Carey, R. D. Forrest, R.U.A. Khan, and S.R.P. Silva, Appl. Phys. Lett. 77, 2006 (2000) Online version

  3. Photoluminescence from polymer-like hydrogenated and nitrogenated amorphous carbon films. J.V. Anguita, S.R.P. Silva and W. Young, J. Appl. Phys. 88, 5175 (2000) Online version

  4. EPR linewidth variation, spin relaxation times, and exchange in amorphous hydrogenated carbon. R. C. Barklie, M. Collins and S.R.P. Silva, Phys. Rev. B 61, 3546, (2000). Online version

  5. Thermal stability of plasma deposited thin films of hydrogenated carbon-nitrogen alloys. J. V. Anguita, S. R. P. Silva, A. P. Burden,B. J. Sealy,S. Haq, M. Hebbron, I. Sturland, and A. Pritchard, JOURNAL OF APPLIED PHYSICS, 1999, Vol.86, No.11, pp.6276-6281 Online version

  6. The growth of gallium nitride thin films produced by reactive sputtering at low temperatures. W.T. Young, S. R. P. Silva, M. Benyoucef, M. Kuball, J.V. Anguita, J.M. Shannon, K.P. Homewood and B. J. Sealy, PHYS. STAT. SOL. (A), 1999, Vol. 179, pp. 319-322. Online version

  7. Thin amorphous gallium nitride films formed by ion beam synthesis. S.R.P. Silva, S.A. Almeida and B.J. Sealy, NUCLEAR INSTRUMENTS IN PHYSICS RESEARCH B, 1999, Vol. 147, No 1-4, pp. 388-392. Online version

  8. Electrical characterization of a-SiOx:H produced by plasma immersion ion implantation. S.M. CHEN, J.M. SHANNON, R.M. GWILLIAM, and B.J. SEALY,
    SOLID STATE ELECTRONICS, 1999, Vol. 43, No. 3, pp 599-607.

  9. A study of electron field emission as a function of film thickness from amorphous carbon films. R.D. Forrest, A.P. Burden, S.R.P. Silva, L.K. Cheah and X. Shi, APPLIED PHYSICS LETTERS, 1998, Vol.73, No. 25, pp.3784-3786. Online version

  10. Fullerene and nanotube formation in cool terrestrial `dusty plasmas'. A.P. Burden and S.R.P. Silva, APPLIED PHYSICS LETTERS, Vol. 73, No. 21, pp. 3082-3084. Online version

  11. Electron field emission from amorphous carbon thin films as a function of annealing. R.D. Forrest, A.P. Burden, R.U.A. Khan, and S.R.P. Silva, SURFACE COATINGS AND TECHNOLOGY, 1998, Vol. 108-109, pp. 577-582.

  12. Nitrogen doping of amorphous carbon thin films. J. Schwan, V. Batori, S. Ulrich, H. Ehrhardt and S.R.P. Silva, JOURNAL OF APPLIED PHYSICS, 1998, Vol.84, No.4, pp.2071-2081 Online version

  13. The formation of diamond-like carbon films due to molecular impacts on graphite. R.P. Webb, J.J. JimenezRodriguez, M. Kerford and S.R.P. Silva, DIAMOND AND RELATED MATERIALS, 1998, Vol.7, No.8, pp.1163-1166 .

  14. Ion-beam synthesis of amorphous gallium nitride. S.A. Almeida, S.R.P. Silva, B.J. Sealy, and J.F. Watts, PHILOSOPHICAL MAGAZINE LETTERS, 1998, Vol.78, No.4, pp.319-324

  15. Fullerene-like carbon nanoparticles generated by radio-frequency plasma-enhanced chemical vapour deposition. A.P. Burden and S.R.P. Silva, PHILOSOPHICAL MAGAZINE LETTERS, 1998, Vol.78, No.1, pp.15-19.

  16. Changes in the Poole-Frenkel coefficient with current induced defect band conductivity of hydrogenated amorphous silicon nitride. S.P. Lau, J.M. Shannon and B.J. Sealy, JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, Vol.230, No.PtA, pp.533-537.

  17. Electron emission from amorphous silicon thin films. S.R.P. Silva, R.D. Forrest and J.M. Shannon, JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, Vol.230, No.PtB, pp.1101-1105

  18. Electronic behaviour and field emission of a-C:H:N/Si heterojunctions. D.A.I. Munindradasai, M. Chhowalla, G.A.J. Amaratunga and S.R.P. Silva, JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, Vol.230, No.PtB, pp.1106-1112.

  19. Barrier height changes in amorphous silicon Schottky diodes following dopant implantation. M.K. Chai, J.M. Shannon and B.J. Sealy, ELECTRONICS LETTERS, 1998, Vol.34, No.9, pp.919-921.

  20. Programmable devices based on current induced conductivity in amorphous silicon alloys. J.M. Shannon, S.P. Lau, A.D. Annis and B.J. Sealy, SOLID-STATE ELECTRONICS, 1998, Vol.42, No.1, pp.91-99.

  21. Superlattice structures based on amorphous carbon. S.R.P. Silva, Rusli, K.P. Homewood and G.A.J Amaratunga, JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, Vol.230, No.PtB, pp.1137-1141.

  22. Controlling mechanisms for field-induced electron emission from diamond-like carbon films. S.R.P Silva and R.G. Forbes, ULTRAMICROSCOPY, 1998, Vol.73, No.1-4, pp.51-57.

  23. An EPR study of defects in hydrogenated amorphous carbon thin films. R.C. Barklie, M. Collins, J. Cunniffe and S.R.P. Silva, DIAMOND AND RELATED MATERIALS, 1998, Vol.7, No.6, pp.864-868.

  24. Stoichiometric limitations of RF plasma deposited amorphous silicon-nitrogen alloys. S.A. Almeida and S.R.P. Silva, THIN SOLID FILMS, 1997, Vol.311, No.1-2, pp.133-137.

  25. The stability of nitrogen-containing amorphous carbon films after annealing at moderate temperatures. A.P. Burden, E. Mendoza, S.R.P. Silva and G.A.J. Amaratunga, DIAMOND AND RELATED MATERIALS, 1998, Vol.7, No.2-5, pp.495-498.

  26. Field emission from undoped and nitrogen-doped tetrahedral amorphous carbon film prepared by filtered cathodic vacuum arc technique. L.K. Cheah, X. Shi, B.K. Tay, S.R.P. Silva and Z. Sun, DIAMOND AND RELATED MATERIALS, 1998, Vol.7, No.2-5, pp.640-644.

  27. Current gain in amorphous silicon hot electron devices. J.M. Shannon, A. Kovsarian and J.E. Curran, ELECTRONICS LETTERS, 1997, Vol.33, No.24, pp.2074-2075.

  28. Electron field emission studies from amorphous carbon thin films. S.R.P. Silva, R.D. Forrest, D.A. Munindradasa and G.A.J. Amaratunga, DIAMOND AND RELATED MATERIALS, 1998, Vol.7, No.2-5, pp.645-650.

  29. Stress-induced formation of high-density amorphous carbon thin films. J. Schwan, S. Ulrich, T. Theel, H. Roth, H. Ehrhardt, P. Becker and S.R.P. Silva, JOURNAL OF APPLIED PHYSICS, 1997, Vol.82, No.12, pp.6024-6030.

  30. Mechanical properties and Raman spectra of tetrahedral amorphous carbon films with high sp(3) fraction deposited using a filtered cathodic arc. S. Xu, D. Flynn, B.K. Tay, S. Prawer, K.W. Nugent, S.R.P. Silva, Y. Lifshitz and W.I. Milne, PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1997, Vol.76, No.3, pp.351-361.

  31. Self-texturing of nitrogenated amorphous carbon thin films for electron field emission. S.R.P. Silva, G.A.J. Amaratunga and J.R. Barnes, APPLIED PHYSICS LETTERS, 1997, Vol.71, No.11, pp.1477-1479.

  32. Photoluminescence and Raman spectroscopy in hydrogenated carbon films. B. Marchon, J. Gui, K. Grannen, G.C. Rauch, J.W. Ager, S.R.P. Silva and J. Robertson, IEEE TRANSACTIONS ON MAGNETICS, 1997, Vol.33, No.5 Pt1, pp.3148-3150.

  33. Electronic effects of ion damage in hydrogenated amorphous silicon alloys. R.A.C.M.N. vanSwaaij, A.D. Annis, B.J. Sealy and J.M.Shannon, JOURNAL OF APPLIED PHYSICS, 1997, Vol.82, No.10, pp.4800-4804.

  34. Electrical characterization of silicon nitride produced by plasma immersion ion implantation. S.M. Chen, J.M. Shannon, R.M. Gwilliam and B.J. Sealy, SURFACE & COATINGS TECHNOLOGY, 1997, Vol.93, No.2-3, pp.269-273.

  35. Electrical effects of nitrogen plasma immersion ion implantation on silicon. S.M. Chen, J.M. Shannon, R.M. Gwilliam and B.J. Sealy, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, Vol.127, pp.901-904.

  36. Influence of ion energy and substrate temperature on the optical and electronic properties of tetrahedral amorphous carbon (ta-C) films. M. Chhowalla, J. Robertson_J, C.W. Chen, S.R.P. Silva, C.A. Davis, G.A.J Amaratunga and W.I. Milne, JOURNAL OF APPLIED PHYSICS, 1997,Vol.81, No.1, pp.139-145.

  37. Nitrogen modification of hydrogenated amorphous carbon films. S.R.P. Silva, J. Robertson, G.A.J Amaratunga, B. Rafferty, L.M. Brown, J. Schwan, D.F. Franceschini and G. Mariotto, JOURNAL OF APPLIED PHYSICS, 1997, Vol.81, No.6, pp.2626-2634.

  38. The structure of tetrahedral amorphous carbon thin films. S.R.P Silva, S. Xu, B.K. Tay, H.S. Tan, H.J. Scheibe, M. Chhowalla and W.I. Milne, THIN SOLID FILMS, 1996, Vol.291, pp.317-322.

  39. Raman spectroscopy on amorphous carbon films. J. Schwan, S. Ulrich, V. Batori, H. Ehrhardt, S.R.P Silva, JOURNAL OF APPLIED PHYSICS, 1996, Vol.80, No.1, pp.440-447.

  40. Nitrogenated amorphous carbon as a semiconductor. S.R.P Silva, Rafferty, G.A.J Amaratunga, J. Schwan, D.F. Franceschini and L.M. Brown, DIAMOND AND RELATED MATERIALS, 1996, Vol.5, No.3-5, pp.401-404.

  41. Properties of carbon ion deposited tetrahedral amorphous carbon films as a function of ion energy. S. Xu, B.K. Tay, H.S. Tan, L. Zhong_L, Y.Q. Tu, S.R.P. Silva and W.I. Milne, JOURNAL OF APPLIED PHYSICS, 1996, Vol.79, No.9, pp.7234-7240.

  42. Characterization of C:H:N deposition from CH4/N-2 rf plasmas using optical emission spectroscopy. K.J. Clay, S.P. Speakman, G.A.J. Amaratunga and S.R.P Silva, JOURNAL OF APPLIED PHYSICS, 1996, Vol.79, No.9, pp.7227-7233.

  43. Influence of precursor gases on the structure of plasma deposited amorphous hydrogenated carbon-nitrogen films. D.F. Franceschini, F.L. Freire and S.R.P. Silva,
    APPLIED PHYSICS LETTERS, 1996, Vol.68, No.19, pp.2645-2647.

  44. Low-threshold cold cathodes made of nitrogen-doped chemical-vapour-deposited diamond. K. Okano, S. Koizumi, S.R.P. Silva and G.A.J. Amaratunga, NATURE, 1996, Vol.381, No.6578, pp.140-141.

  45. Nitrogen containing hydrogenated amorphous carbon for thin-film field emission cathodes. G.A.J. Amaratunga and S.R.P. Silva, APPLIED PHYSICS LETTERS, 1996, Vol.68, No.18, pp.2529-2531.

  46. Structure and luminescence properties of an amorphous hydrogenated carbon. S.R.P. Silva, J. Robertson, Rusli, G.A.J. Amaratunga and J. Schwan, PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1996, Vol.74, No.4, pp.369-386.

  47. Nanocrystallites in tetrahedral amorphous carbon films. S.R.P. Silva, S. Xu, B.X. Tay, H.S. Tan and W.I Milne, APPLIED PHYSICS LETTERS, 1996, Vol.69, No.13, p.1980.

  48. Field emission from a-C:H and a-C:H:N. G.A.J. Amaratunga and S.R.P Silva, JOURNAL OF NON-CRYSTALLINE SOLIDS, 1996, Vol.200, No.Pt2, pp.611-614.

  49. Properties of cadmium sulphide films grown by single-source metalorganic chemical vapour deposition with dithiocarbamate precursors. P. O'Brien, J.R. Walsh, I.M. Watson, L. Hart and S.R.P. Silva, JOURNAL OF CRYSTAL GROWTH, 1996, Vol.167, No.1-2, pp.133-142.

  50. Highly luminescent hydrogenated amorphous carbon (a-C:H) thin films. Rusli, G.A.J Amaratunga and S.R.P. Silva, OPTICAL MATERIALS, 1996, Vol.6, No.1-2, pp.93-98.